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METHODS OF FABRICATING FIELD EFFECT TRANSISTORS INCLUDING TITANIUM NITRIDE GATES OVER PARTIALLY NITRIDED OXIDE AND DEVICES SO FABRICATED
METHODS OF FABRICATING FIELD EFFECT TRANSISTORS INCLUDING TITANIUM NITRIDE GATES OVER PARTIALLY NITRIDED OXIDE AND DEVICES SO FABRICATED
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机译:制备包括部分氮化物上的氮化钛栅和如此制备的器件的场效应晶体管的方法
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摘要
A gate of an integrated circuit field effect transistor is fabricated by fabricating a gate insulating layer on an integrated circuit substrate, fabricating a metal nitride layer on the gate insulating layer, annealing the metal nitride layer in a nitridizing ambient and fabricating a cap on the metal nitride layer that has been annealed. Thereafter, the cap on the metal nitride layer may be etched to expose sidewalls thereof and another anneal in a nitridizing ambient may take place. Related integrated circuit field effect transistors are also described.
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