DEEP TRENCH CAPACITOR WITH CONFORMALLY-DEPOSITED CONDUCTIVE LAYERS HAVING COMPRESSIVE STRESS

摘要

A high density deep trench MIM capacitor structure is provided wherein conductive-compressive-conformally applied layers of a semiconductor material, such as a Poly-Si_xGe_1-x, are interleaved within MIM capacitor layers to counterbalance the tensile stresses created by such MIM capacitor layers. The interleaving of conductive-compressive-conformally applied material layers are adapted to counterbalance convex (upward) bowing of silicon wafers during the manufacturing process of high density deep trench MIM capacitor silicon devices to thereby help maximize production yields of such devices per wafer.