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Transistor Comprising High-K Metal Gate Electrode Structures Including a Polycrystalline Semiconductor Material and Embedded Strain-Inducing Semiconductor Alloys
Transistor Comprising High-K Metal Gate Electrode Structures Including a Polycrystalline Semiconductor Material and Embedded Strain-Inducing Semiconductor Alloys
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机译:包含高K金属栅电极结构的晶体管,包括多晶半导体材料和嵌入式应变感应半导体合金
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摘要
When forming sophisticated high-k metal gate electrode structures in an early manufacturing stage on the basis of a silicon/germanium semiconductor alloy for adjusting appropriate electronic conditions in the channel region, the efficiency of a strain-inducing embedded semiconductor alloy, such as a silicon/germanium alloy, may be enhanced by initiating a crystal growth in the silicon material of the gate electrode structure after the gate patterning process. In this manner, the negative strain of the threshold voltage adjusting silicon/germanium alloy may be reduced or compensated for.
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