Optoelectronic Devices Including Compound Valence-Band Quantum Well Structures

摘要

Semiconductor optoelectronic devices based on type-II band alignments comprising a compound valence-band quantum well structure, known as an H-layer, are disclosed. The use of the H-layer structure allows simultaneous optimization of optical properties of the semiconductor structures as well as lattice matching of the various layers of the device. The use of H-layer valence-band quantum wells enables improvements to several optical device applications including semiconductor lasers, optical modulators, photon detectors and the like.