首页>
外国专利>
Intrinsic Programming Current Control for a RRAM
Intrinsic Programming Current Control for a RRAM
展开▼
机译:RRAM的固有编程电流控制
展开▼
页面导航
摘要
著录项
相似文献
摘要
A resistive switching device. The device includes a substrate and a first dielectric material overlying a surface region of the substrate. The device includes a first electrode overlying the first dielectric material and an optional buffer layer overlying the first electrode. The device includes a second electrode structure. The second electrode includes at least a silver material. In a specific embodiment, a switching material overlies the optional buffer layer and disposed between the first electrode and the second electrode. The switching material comprises an amorphous silicon material in a specific embodiment. The amorphous silicon material is characterized by a plurality of defect sites and a defect density. The defect density is configured to intrinsically control programming current for the device.
展开▼