Very Low-Programming-Current RRAM With Self-Rectifying Characteristics

摘要

To resolve the sneak leakage problem and reduce the power consumption in crossbar RRAM arrays, a Cu/AlO/aSi/Ta cell with self-rectifying characteristics is developed. The cell exhibits low operating current (nA), high ON/OFF ratios (), and pronounced nonlinearity. The use of low-programming-current RRAM elements avoids the current-driving capability bottleneck of selectors, while the integrated rectifying layer improves the RRAM operation reliability. Endurance of over 500 cycles with ON/OFF ratio was achieved without external current compliance. Even at such low programming levels, retention over s at 100 °C can still be obtained.