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NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR CONTROLLING ONE TIME PROGRAMMING OF THE SAME, ESPECIALLY PROTECTING INTRINSIC DATA STORED AT ONE TIME PROGRAMMING AREA
NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR CONTROLLING ONE TIME PROGRAMMING OF THE SAME, ESPECIALLY PROTECTING INTRINSIC DATA STORED AT ONE TIME PROGRAMMING AREA
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机译:非易失性半导体存储器和方法,用于控制相同时间的一次编程,尤其是保护一次编程区域存储的内部数据
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摘要
PURPOSE: A nonvolatile semiconductor memory device and a method for controlling one time programming of the same are provided to stably protect the intrinsic data stored at the one time programming area of the nonvolatile memory cell array without requiring the erase operation. CONSTITUTION: A nonvolatile semiconductor memory device includes a nonvolatile memory cell array(10'), a data write circuit, a data read circuit and a controller(26'). The nonvolatile memory cell array is provided with one time programming ares accessed in response to the first decoding signal and a normal area accessed in response to the second decoding signal. The data write circuit writes the data on the nonvolatile memory cell array in response to the write enable signal during the write operation. The data read circuit reads the data outputted from the nonvolatile memory cell array in response to the sense amplifier enable signal during the read operation. And, the controller activates the sense amplifier enable signal when the first decoding signal is generated and generates the write enable signal by comparing the data outputted from the data read circuit.
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