首页> 外国专利> NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR CONTROLLING ONE TIME PROGRAMMING OF THE SAME, ESPECIALLY PROTECTING INTRINSIC DATA STORED AT ONE TIME PROGRAMMING AREA

NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR CONTROLLING ONE TIME PROGRAMMING OF THE SAME, ESPECIALLY PROTECTING INTRINSIC DATA STORED AT ONE TIME PROGRAMMING AREA

机译:非易失性半导体存储器和方法,用于控制相同时间的一次编程,尤其是保护一次编程区域存储的内部数据

摘要

PURPOSE: A nonvolatile semiconductor memory device and a method for controlling one time programming of the same are provided to stably protect the intrinsic data stored at the one time programming area of the nonvolatile memory cell array without requiring the erase operation. CONSTITUTION: A nonvolatile semiconductor memory device includes a nonvolatile memory cell array(10'), a data write circuit, a data read circuit and a controller(26'). The nonvolatile memory cell array is provided with one time programming ares accessed in response to the first decoding signal and a normal area accessed in response to the second decoding signal. The data write circuit writes the data on the nonvolatile memory cell array in response to the write enable signal during the write operation. The data read circuit reads the data outputted from the nonvolatile memory cell array in response to the sense amplifier enable signal during the read operation. And, the controller activates the sense amplifier enable signal when the first decoding signal is generated and generates the write enable signal by comparing the data outputted from the data read circuit.
机译:目的:提供一种非易失性半导体存储器件及其控制其一次编程的方法,以稳定地保护存储在非易失性存储单元阵列的一次编程区域中的本征数据,而无需进行擦除操作。构成:一种非易失性半导体存储器件,包括非易失性存储单元阵列(10'),数据写入电路,数据读取电路和控制器(26')。非易失性存储单元阵列具有响应于第一解码信号而被一次编程的存储区以及响应于第二解码信号而被访问的普通区域。数据写电路在写操作期间响应于写使能信号将数据写在非易失性存储单元阵列上。数据读取电路在读取操作期间响应于读出放大器使能信号来读取从非易失性存储单元阵列输出的数据。并且,当产生第一解码信号时,控制器激活读出放大器使能信号,并通过比较从数据读取电路输出的数据来产生写使能信号。

著录项

  • 公开/公告号KR20050008225A

    专利类型

  • 公开/公告日2005-01-21

    原文格式PDF

  • 申请/专利权人 SAMSUNG ELECTRONICS CO. LTD.;

    申请/专利号KR20030048081

  • 发明设计人 JEON BYUNG GIL;MIN BYUNG JUN;

    申请日2003-07-14

  • 分类号G11C16/00;

  • 国家 KR

  • 入库时间 2022-08-21 22:05:59

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