PACKAGE STRUCTURE HAVING THROUGH-SILICON-VIA (TSV) CHIP EMBEDDED THEREIN AND FABRICATION METHOD THEREOF

摘要

A package structure includes a dielectric layer having a first surface and a second surface; a through-silicon-via (TSV) chip embedded in the dielectric layer, wherein the TSV chip has a plurality of conductive TSVs, and electrode pads formed on a surface of the TSV chip that are electrically connected to the conductive TSVs and exposed from the second surface of the dielectric layer; and a first circuit layer formed on the first surface of the dielectric layer, wherein the first circuit layer is connected to the conductive TSVs of the TSV chip by the conductive blind vias, so that the high wiring density semiconductor chip can be disposed on the electrode pads of the TSV chip in order to integrate high wiring density semiconductor chips. The invention also provides a fabrication method for fabricating the package structure having an embedded TSV chip.