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Semiconductor device having first and second source and drain electrodes sandwiched between an island-shaped semiconductor film
Semiconductor device having first and second source and drain electrodes sandwiched between an island-shaped semiconductor film
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机译:具有夹在岛状半导体膜之间的第一和第二源极和漏极的半导体器件
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摘要
An object is to obtain a semiconductor device with improved characteristics by reducing contact resistance of a semiconductor film with electrodes or wirings, and improving coverage of the semiconductor film and the electrodes or wirings. The present invention relates to a semiconductor device including a gate electrode over a substrate, a gate insulating film over the gate electrode, a first source or drain electrode over the gate insulating film, an island-shaped semiconductor film over the first source or drain electrode, and a second source or drain electrode over the island-shaped semiconductor film and the first source or drain electrode. Further, the second source or drain electrode is in contact with the first source or drain electrode, and the island-shaped semiconductor film is sandwiched between the first source or drain electrode and the second source or drain electrode. Moreover, the present invention relates to a manufacturing method of the semiconductor device.
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