首页> 外国专利> Etching system and method for forming multiple porous semiconductor regions with different optical and structural properties on a single semiconductor wafer

Etching system and method for forming multiple porous semiconductor regions with different optical and structural properties on a single semiconductor wafer

机译:在单个半导体晶片上形成具有不同光学和结构特性的多个多孔半导体区域的蚀刻系统和方法

摘要

Disclosed is an electrochemical etching system with localized etching capability. The system allows multiple different porous semiconductor regions to be formed on a single semiconductor wafer. Localized etching is achieved through the use of one or more stationary and/or movable computer-controlled inner containers operating within an outer container. The outer container holds the electrolyte solution and acts as an electrolyte supply source for the inner container(s). The inner container(s) limit the size of the etched region of the semiconductor wafer by confining the electric field. Additionally, the current amount passing through each inner container during the electrochemical etching process can be selectively adjusted to achieve a desired result within the etched region. Localized etching of sub-regions within each etched region can also be achieved through the use of different stationary and/or moveable electrode structures and shields within each inner container. Also disclosed are associated method embodiments.
机译:公开了一种具有局部蚀刻能力的电化学蚀刻系统。该系统允许在单个半导体晶片上形成多个不同的多孔半导体区域。通过使用在外部容器内操作的一个或多个固定和/或可移动的计算机控制内部容器来实现局部蚀刻。外部容器容纳电解质溶液并用作内部容器的电解质供应源。内部容器通过限制电场来限制半导体晶片的蚀刻区域的尺寸。另外,可以选择性地调节在电化学蚀刻过程中通过每个内部容器的电流量,以在蚀刻区域内获得期望的结果。通过在每个内部容器内使用不同的固定和/或可移动电极结构和屏蔽,也可以实现每个蚀刻区域内局部区域的局部蚀刻。还公开了相关的方法实施例。

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