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Fast switching lateral insulated gate bipolar transistor (LIGBT) with trenched contacts
Fast switching lateral insulated gate bipolar transistor (LIGBT) with trenched contacts
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机译:带沟槽触点的快速开关横向绝缘栅双极晶体管(LIGBT)
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摘要
A lateral insulated gate bipolar transistor (LIGBT) includes a drain-anode adjoining trenched contact penetrating through an insulating layer and extending into an epitaxial layer, directly contacting to a drain region and an anode region, and the drain region vertically contacting to the anode region along sidewall of the drain-anode adjoining trenched contact. The LIGBT further comprises a breakdown voltage enhancement doping region wrapping around the anode region. The LIGBTs in accordance with the invention offer the advantages of high breakdown voltage and low on-resistance as well as high switching speed.
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