A dual-gate shorted-anode silicon-on-insulator lateral insulated gate bipolar transistor with floating ohimc contact for suppressing snapback and fast switching characteristics

摘要

A new dual-gate shorted-anode SOI (siliocion-on-insulator) LIGBT(lateral insulate gate bipolar transistor), which suppresses the snapback effectively with gates signal of the same polarity, is proposed and verified by numerical simulation. The suppression of the snapback in I-V characteristics is obtained by initiating the hole injection by employing the dual gate and FOC(floating ohmic contact) in the new device. The proposed device eliminates the snapback completely and has a low forward voltage drop compared with conventional SA-LIGBT (shorted anode lateral insulated gate bipolar transistor). Snapback of SA-LIGBT occurs at anode voltage 11 V, but in case of the proposed device, the snapback phenomenon is completely eliminated. Also, by employing the FOC, the drive signals of two gates are of an identical polarity. Therefore the proposed device requires no additional power supply, which is a necessity for driving conventional dual-gate SA-LIGBT.