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Laminated stress overlayer using In-situ multiple plasma treatments for transistor improvement
Laminated stress overlayer using In-situ multiple plasma treatments for transistor improvement
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机译:使用原位多次等离子体处理的叠层应力覆盖层,可改善晶体管性能
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摘要
Integrated circuits (ICs) commonly contain pre-metal dielectric (PMD) liners with compressive stress to increase electron and hole mobilities in MOS transistors. The increase is limited by the thickness of the PMD liner. The instant invention is a multi-layered PMD liner in an integrated circuit which has a higher stress than single layer PMD liners. Each layer in the inventive PMD liner is exposed to a nitrogen-containing plasma, and which has a compressive stress higher than 1300 MPa. The PMD liner of the instant invention is composed of 3 to 10 layers. The hydrogen content of the first layer may be increased to improve transistor properties such as flicker noise and Negative Bias Temperature Instability (NBTI). An IC containing the inventive PMD liner and a method for forming same are also claimed.
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