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Vacuum channel transistor and diode emitting thermal cathode electrons, and method of manufacturing the vacuum channel transistor

机译:真空沟道晶体管和发射热阴极电子的二极管,以及制造真空沟道晶体管的方法

摘要

Provided are a transistor and a method of manufacturing the transistor, and more particularly, a vacuum channel transistor emitting thermal cathode electrons and a method of manufacturing the vacuum channel transistor. The vacuum channel transistor includes: a motherboard; a micro heater member having a thin-film structure formed on the motherboard; a cathode member having a thin-film structure spaced apart from a center part of the micro heater member by a first interval and formed on the micro heater member; a gate member formed on both outer walls of upper parts of the cathode member; and an anode member spaced apart from the cathode member by a second interval through spacers disposed on the gate member, wherein a vacuum electron passing area is interposed between the cathode member and the anode member by the second interval.
机译:提供一种晶体管及其制造方法,更具体地,提供一种发射热阴极电子的真空沟道晶体管及其制造方法。真空通道晶体管包括:主板;在主板上形成有薄膜结构的微型加热器。阴极构件,其具有薄膜结构,该薄膜构件与所述微型加热器构件的中心部分隔开第一间隔并且形成在所述微型加热器构件上。在阴极部件的上部的两个外壁上形成有门部件。阳极部件通过设置在栅极部件上的间隔物与阴极部件隔开第二间隔,其中,真空电子通过区域以第二间隔介于阴极部件和阳极部件之间。

著录项

  • 公开/公告号US8115207B2

    专利类型

  • 公开/公告日2012-02-14

    原文格式PDF

  • 申请/专利权人 DAE YONG KIM;HYUN TAK KIM;

    申请/专利号US20090606317

  • 发明设计人 HYUN TAK KIM;DAE YONG KIM;

    申请日2009-10-27

  • 分类号H01L29/76;

  • 国家 US

  • 入库时间 2022-08-21 17:28:27

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