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Materials Data and Theory for Electron Emitters. Design of Wideband Microwave Amplifiers Based on a Combination of Heterojunction Bipolar Transistors, Cold Cathodes, and Coplanar Waveguide Technologies.

机译：电子发射体的材料数据和理论。基于异质结双极晶体管，冷阴极和共平面波导技术组合的宽带微波放大器设计。

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摘要

The objective of this effort is to explore novel design schemes to realize compact wideband microwave amplifiers suited for cold cathode emitter technology. Considerations of a monolithic implementation of an HBT with a cold cathode structure based on several material systems are presented.

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作者
Cahay, M.; Roenker, K. P.;
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年度 2001
页码 1-36
总页数 36
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
Electron emission; Emitters; Microwave amplifiers; Heterojunction bipolar transistors; Materials; Tunneling(Electronics); Current density; Energy gaps; Waveguides; Electric fields; Semiconductors; Cathodes; Planar structures; Broadband; Solid state electronics; Cold cathode tubes; Diamond films; Coplanar waveguide technologies; Cold electron emitter; Field emitter arrays; Solid state cold cathodes;

机译：电子发射;发射器;微波放大器;异质结双极晶体管;材料;隧道（电子）;电流密度;能隙;波导;电场;半导体;阴极;平面结构;宽带;固态电子学;冷阴极管;金刚石薄膜;共面波导技术;冷电子发射器;场发射器阵列;固态冷阴极;

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1. E-band Indium Phosphide double heterojunction bipolar transistor monolithic microwave-integrated circuit power amplifier based on stacked transistors [J] . Squartecchia Michele, Johansen Tom K., Dupuy Jean-Yves, Microwave and optical technology letters . 2019,第2期

机译：基于堆叠晶体管的电子带铟磷化铟双异质结双极晶体管单整体微波集成电路功率放大器
2. Note: Cryogenic low-noise dc-coupled wideband differential amplifier based on SiGe heterojunction bipolar transistors [J] . Beev Nikolai, Kiviranta Mikko Review of Scientific Instruments . 2012,第6期

机译：注：基于SiGe异质结双极晶体管的低温低噪声直流耦合宽带差分放大器
3. Large-signal characteristics of InP-based heterojunction bipolar transistors and optoelectronic cascode transimpedance amplifiers [J] . Samelis A., Pavlidis D. IEEE Transactions on Electron Devices . 1996,第12期

机译：基于InP的异质结双极晶体管和光电共源共栅跨阻放大器的大信号特性
4. Preliminary design of wideband microwave amplifier using SMT package SiGe heterojunction bipolar transistor [C] . Rahim, A.F.A., Afifi, . 2005

机译：使用SMT封装SiGe异质结双极型晶体管的宽带微波放大器的初步设计。
5. Design, fabrication and characterization of N-channel InGaAsP-InP based inversion channel technology devices (ICT) for optoelectronic integrated circuits (OEIC): Double heterojunction optoelectronic switches (DOES), heterojunction field-effect transistors (HFET), bipolar inversion channel field-effect transistors (BICFET) and bipolar inversion channel phototransistors (BICPT). [D] . Tan, Eugene. 1998

机译：基于N沟道InGaAsP-InP的倒置通道技术器件（ICT）的设计，制造和表征，用于光电集成电路（OEIC）：双异质结光电开关（DOES），异质结场效应晶体管（HFET），双极倒置沟道场-效应晶体管（BICFET）和双极型反向沟道光电晶体管（BICPT）。
6. Protein Assays on Organic Electronics: Rational Device and Material Designs for Organic Transistor‐Based Sensors [O] . Dr. Tsukuru Minamiki, Dr. Riku Kubota, Yui Sasaki, 2020

机译：有机电子产品上的蛋白质分析：基于有机晶体管的传感器的合理设备和材料设计
7. Heterojunction Bipolar Transistor: 2D Material-Based Vertical Double Heterojunction Bipolar Transistors with High Current Amplification (Adv. Electron. Mater. 3/2019) [O] . Geonyeop Lee, Stephen J. Pearton, Fan Ren, 2019

机译：异结双极晶体管：具有高电流扩增的2D基于材料的垂直双相杂交双极晶体管（ADV。电子。Matter。3/2019）

Materials Data and Theory for Electron Emitters. Design of Wideband Microwave Amplifiers Based on a Combination of Heterojunction Bipolar Transistors, Cold Cathodes, and Coplanar Waveguide Technologies.

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