Circuit Models of Field Emission Silicon Diode and Transistor with a Nanoscale Vacuum Channel

摘要

Circuit models of field emission silicon diode and transistor with a nanoscale vacuum channel are presented. Parameters of the equivalent circuit of these vacuum devices such as parasitic resistances and capacitances have been calculated to make an analysis of the circuit performance. Models are based on the modified Fowler-Nordheim equation, taking into account the variation of field-enhancement factors from the geometric parameters at the nanoscale. Output current-voltage characteristics of the diode and transistor were calculated using SPICE simulator. The obtained results can found their practical application in the development of a new generation of nanoscale vacuum channel field emission devices.