首页> 外国专利> APPARATUS AND METHODS OF FORMING A CONDUCTIVE TRANSPARENT OXIDE FILM LAYER FOR USE IN A CADMIUM TELLURIDE BASED THIN FILM PHOTOVOLTAIC DEVICE

APPARATUS AND METHODS OF FORMING A CONDUCTIVE TRANSPARENT OXIDE FILM LAYER FOR USE IN A CADMIUM TELLURIDE BASED THIN FILM PHOTOVOLTAIC DEVICE

机译:形成用于基于碲化镉的薄膜光电器件的导电透明氧化物薄膜层的装置和方法

摘要

Methods for forming a TCO layer on a substrate are generally provided and include sputtering a TCO layer on a substrate from a target including cadmium stannate. A cap material (e.g., including cadmium) is deposited onto an outer surface of an indirect anneal system, and the TCO layer can be annealed at an anneal temperature while in contact with or within about 10 cm of the cap material.;An anneal oven is also generally provided and includes an indirect anneal system defining a deposition surface and an anneal surface such that a cap material deposited on the anneal surface of the indirect anneal system is positioned to be in contact with or within about 10 cm of a thin film on the substrate. A cap material source can be positioned to deposit the cap material onto the deposition surface such that the anneal surface comprises the cap material.
机译:通常提供在衬底上形成TCO层的方法,该方法包括从包含锡酸镉的靶溅射在衬底上的TCO层。将盖材料(例如,包括镉)沉积到间接退火系统的外表面上,并且可以在与盖材料接触或在盖材料约10 cm内的同时在退火温度下对TCO层进行退火。通常还提供了一种包括间接退火系统的间接退火系统,该间接退火系统限定了沉积表面和退火表面,使得沉积在间接退火系统的退火表面上的盖材料被定位为与薄膜接触或在薄膜上约10厘米之内。基板。盖材料源可以被定位成将盖材料沉积到沉积表面上,使得退火表面包括盖材料。

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