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METHODS OF FORMING A CONDUCTIVE TRANSPARENT OXIDE FILM LAYER FOR USE IN A CADMIUM TELLURIDE BASED THIN FILM PHOTOVOLTAIC DEVICE
METHODS OF FORMING A CONDUCTIVE TRANSPARENT OXIDE FILM LAYER FOR USE IN A CADMIUM TELLURIDE BASED THIN FILM PHOTOVOLTAIC DEVICE
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机译:形成用于基于碲化镉的薄膜光电器件的导电透明氧化物薄膜层的方法
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摘要
Methods for forming a conductive oxide layer on a substrate are provided. The method can include sputtering a transparent conductive oxide layer (“TCO layer”) on a substrate from a target (e.g., including cadmium stannate) at a sputtering temperature of about 10° C. to about 100° C. The TCO layer can then be annealed in an anneal temperature comprising cadmium at an annealing temperature of about 500° C. to about 700° C. The method of forming the TCO layer can be used in a method for manufacturing a cadmium telluride based thin film photovoltaic device, further including forming a cadmium sulfide layer over the transparent conductive oxide layer and forming a cadmium telluride layer over the cadmium sulfide layer.
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