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Method of fabricating semiconductor device by thinning hardmask layers on frontside and backside of substrate
Method of fabricating semiconductor device by thinning hardmask layers on frontside and backside of substrate
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机译:通过减薄衬底正面和背面上的硬掩模层来制造半导体器件的方法
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摘要
The disclosure relates to integrated circuit fabrication, and more particularly to a method for fabricating a semiconductor device. An exemplary method for fabricating the semiconductor device comprises providing a substrate; forming pad oxide layers over a frontside and a backside of the substrate; forming hardmask layers over the pad oxide layers on the frontside and the backside of the substrate; and thinning the hardmask layer over the pad oxide layer on the frontside of the substrate.
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