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Nonvolatile memory element, manufacturing method thereof, and nonvolatile semiconductor apparatus using nonvolatile memory element

机译：非易失性存储元件，其制造方法以及使用该非易失性存储元件的非易失性半导体装置

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摘要

A nonvolatile semiconductor apparatus of the present invention comprises (103), a second electrode (105), and a resistance variable layer (104) disposed between the first electrode (103) and the second electrode (105), a resistance value of the resistance variable layer being switchable reversibly in response to an electric signal applied between the electrodes (103), (105), wherein the resistance variable layer (104) comprises an oxide containing tantalum and nitrogen.

机译：本发明的非易失性半导体装置包括（ 103 ），第二电极（ 105 ）和设置的电阻变化层（ 104 ）。在第一电极（ 103 ）和第二电极（ 105 ）之间，电阻变化层的电阻值可响应施加在电极之间的电信号而可逆地切换（ 103 ），（ 105 ），其中电阻变化层（ 104 ）包含含有钽和氮的氧化物。 展开▼

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公开/公告号US8148711B2

专利类型

公开/公告日2012-04-03

原文格式PDF

申请/专利权人 SATORU FUJII;YOSHIHIKO KANZAWA;TAKESHI TAKAGI;KAZUHIKO SHIMAKAWA;
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申请/专利号US20080600793

发明设计人 SATORU FUJII;YOSHIHIKO KANZAWA;TAKESHI TAKAGI;KAZUHIKO SHIMAKAWA;
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申请日2008-05-16

分类号H01L45/00;

国家 US

入库时间 2022-08-21 17:26:42

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