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Method for forming an interfacial passivation layer on the Ge semiconductor
Method for forming an interfacial passivation layer on the Ge semiconductor
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机译:在Ge半导体上形成界面钝化层的方法
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摘要
The invention discloses a method for forming an interfacial passivation layer on the Ge semiconductor. The supercritical CO2 fluids is used to form an interfacial passivation layer between Ge channel and gate insulator layer, and improve the dielectric characteristics of gate insulator after high-temperature thermal annealing process.
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