首页> 外国专利> MICRO-MACHINED THIN FILM HYDROGEN GAS SENSOR, AND METHOD OF MAKING AND USING THE SAME

MICRO-MACHINED THIN FILM HYDROGEN GAS SENSOR, AND METHOD OF MAKING AND USING THE SAME

机译:微机械薄膜氢气体传感器及其制造和使用方法

摘要

A hydrogen sensor including a thin film sensor element formed, e.g., by metalorganic chemical vapor deposition (MOCVD) or physical vapor deposition (PVD), on a microhotplate structure. The thin film sensor element includes a film of a hydrogen-interactive metal film that reversibly interacts with hydrogen to provide a correspondingly altered response characteristic, such as optical transmissivity, electrical conductance, electrical resistance, electrical capacitance, magnetoresistance, photoconductivity, etc., relative to the response characteristic of the film in the absence of hydrogen. The hydrogen-interactive metal film may be overcoated with a thin film hydrogen-permeable barrier layer to protect the hydrogen-interactive film from deleterious interaction with non-hydrogen species. The hydrogen sensor of the invention may be usefully employed for the detection of hydrogen in an environment susceptible to the incursion or generation of hydrogen and may be conveniently configured as a hand-held apparatus.
机译:氢传感器包括在微热板结构上例如通过金属有机化学气相沉积(MOCVD)或物理气相沉积(PVD)形成的薄膜传感器元件。薄膜传感器元件包括氢相互作用金属膜的膜,该膜与氢可逆地相互作用以提供相应改变的响应特性,例如相对于光透射率,电导率,电阻,电容,磁阻,光电导率等。在没有氢的情况下薄膜的响应特性。氢相互作用金属膜可以覆盖有薄膜氢渗透阻挡层,以保护氢相互作用膜免于与非氢物质的有害相互作用。本发明的氢传感器可有效地用于在易受氢的侵入或产生的环境中检测氢,并可方便地配置为手持式装置。

著录项

  • 公开/公告号EP1153291B1

    专利类型

  • 公开/公告日2011-12-14

    原文格式PDF

  • 申请/专利权人 MST TECHNOLOGY GMBH;

    申请/专利号EP20000923060

  • 发明设计人 DIMEO FRANK JR.;BHANDARI GAUTAM;

    申请日2000-01-12

  • 分类号G01N33;G01N27/12;

  • 国家 EP

  • 入库时间 2022-08-21 17:18:22

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