PROCESS FOR ELECTRODEPOSITION OF COPPER CHIP TO CHIP, CHIP TO WAFER AND WAFER TO WAFER INTERCONNECTS IN THROUGH-SILICON VIAS (TSV) WITH HEATED SUBSTRATE AND COOLED ELECTROLYTE

摘要

Process of electrodepositing a metal in a high aspect ratio via in a silicon substrate to form a through-silicon-via (TSV), utilizing an electrolytic bath including a redox mediator, in an electrolytic metal plating system including a chuck adapted to hold the silicon substrate and to heat the silicon substrate to a first temperature, a temperature control device to maintain temperature of the electrolytic bath at a second temperature, in which the first temperature is maintained in a range from about 30 °C to about 60 °C and the second temperature is maintained at a temperature (a) at least 5°C lower than the first temperature and (b) in a range from about 15°C to about 35°C.