CHEMICAL MECHANICAL PLANARIZATION SLURRY CONTAINING ORGANIC ACID FOR SILICON AND COPPER

摘要

Disclosed is a chemical mechanical planarization slurry containing organic acid for silicon and copper, comprises abrasive particles, an oxidant, an organic acid-type polishing rate regulating agent, and may further comprise a pH regulating agent, a surfactant, a stabilizer, a corrosion inhibitor, a sterilant and the like. The polishing rate adjusting agent can be one of or a mixture of a multiple of, an organic acid, an amino acid, an organic phosphonic acid and an organic sulfonic acid. The disclosed chemical mechanical planarization slurry can simultaneously obtain relatively high removal rates for both silicon and copper, regulate the polishing selection ratio of copper to silicon in chemical mechanical polishing, and control the local or overall corrosive effect of the metallic material, substantially free of surface defects, scratches, stains and other residual contaminants on the substrate.