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MEMORY DEVICES INCORPORATING STRINGS OF MEMORY CELLS HAVING STRING SELECT GATES, AND METHODS OF FORMING THE SAME
MEMORY DEVICES INCORPORATING STRINGS OF MEMORY CELLS HAVING STRING SELECT GATES, AND METHODS OF FORMING THE SAME
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机译:包含具有选择门的记忆细胞的记忆体的记忆体装置以及形成该记忆体的方法
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摘要
Strings of memory cells having a string select gate configured to selectively couple ends of a string to a data line and a source line concurrently, memory devices incorporating such strings and methods for accessing and forming such strings are provided. For example, non-volatile memory devices are disclosed that utilize vertical structure NAND strings of serially-connected non-volatile memory cells. One such string including two or more serially-connected non-volatile memory cells where each end of the string shares a string select gate with the other end of the string is disclosed.
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