TRANSPARENT ION SENSOR CHIP USING A FIELD-EFFECT-TRANSISTOR-TYPE SIGNAL CONVERTER IN WHICH AN EXTENDED GATE ELECTRODE IS FORMED, AND METHOD FOR MANUFACTURING THE SENSOR CHIP

摘要

The present invention relates to a transparent ion sensor chip using a field-effect-transistor-type signal converter, and to a method for manufacturing the sensor chip, wherein the sensor chip is capable of measuring various ion concentrations of electrolytes, and of being formed so as to be transparent to enable optical measurement, and thus enables the measurement of the behavior of a cell. The sensor chip has an ion-sensing unit which is located on a gate electrode extending from a channel unit of a transistor so as to prevent the ion-sensing unit from being degraded by a solution, thereby improving the durability of the sensor chip.