首页> 外国专利> TRANSPARENT ION DETECTION SENSOR CHIP COMPRISING FIELD EFFECT TRANSISTOR SIGNAL TRANSDUCER WITH EXTENDED GATE ELECTRODE AND PREPARATION METHOD THEREOF

TRANSPARENT ION DETECTION SENSOR CHIP COMPRISING FIELD EFFECT TRANSISTOR SIGNAL TRANSDUCER WITH EXTENDED GATE ELECTRODE AND PREPARATION METHOD THEREOF

机译:带有扩展栅电极的场效应晶体管信号变换器的透明离子检测传感器芯片及其制备方法

摘要

The present invention may optionally measuring different ion concentration of the electrolyte , thereby producing an optically transparent at the same time is to be measured and the measurement is also possible behavior of the developing cells, in order to prevent deterioration due to the ion detection part solution configured to position on the gate electrode extending from the channel portion of the ion detection additional transistor is a field effect transistor with improved durability type transparency relates to the ion sensor chip and its manufacturing method using the signal converter . ;
机译:本发明可以任选地测量电解质的不同离子浓度,从而在待测量的同时产生光学透明的,并且该测量也是显影单元的可能行为,以便防止由于离子检测部分溶液引起的劣化。被配置为定位在从离子检测附加晶体管的沟道部分延伸的栅电极上的是一种具有改善的耐用型透明性的场效应晶体管,涉及离子传感器芯片及其使用信号转换器的制造方法。 ;

著录项

  • 公开/公告号KR101359735B1

    专利类型

  • 公开/公告日2014-02-11

    原文格式PDF

  • 申请/专利权人

    申请/专利号KR20120006934

  • 申请日2012-01-20

  • 分类号G01N27/414;G01N33/48;G01N27/333;

  • 国家 KR

  • 入库时间 2022-08-21 15:41:32

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