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TRANSPARENT ION DETECTION SENSOR CHIP COMPRISING FIELD EFFECT TRANSISTOR SIGNAL TRANSDUCER WITH EXTENDED GATE ELECTRODE AND PREPARATION METHOD THEREOF
TRANSPARENT ION DETECTION SENSOR CHIP COMPRISING FIELD EFFECT TRANSISTOR SIGNAL TRANSDUCER WITH EXTENDED GATE ELECTRODE AND PREPARATION METHOD THEREOF
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机译:带有扩展栅电极的场效应晶体管信号变换器的透明离子检测传感器芯片及其制备方法
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摘要
The present invention may optionally measuring different ion concentration of the electrolyte , thereby producing an optically transparent at the same time is to be measured and the measurement is also possible behavior of the developing cells, in order to prevent deterioration due to the ion detection part solution configured to position on the gate electrode extending from the channel portion of the ion detection additional transistor is a field effect transistor with improved durability type transparency relates to the ion sensor chip and its manufacturing method using the signal converter . ;
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