TRANSPARENT ION DETECTING SENSOR CHIP USING FIELD-EFFECT TRANSISTOR TYPE SIGNAL CONVERTERS IN WHICH AN EXTENDED GATE ELECTRODE IS FORMED AND A MANUFACTURING METHOD THEREOF, CAPABLE OF DETECTING VARIOUS ION CONCENTRATIONS

摘要

PURPOSE: A transparent ion detecting sensor chip using field-effect transistor type signal converters in which an extended gate electrode is formed and a manufacturing method thereof are provided to optically observe real time fetal movement of a cell and to selectively detect an ion by converting a potential difference caused by various ion changes into a changes of a current value.;CONSTITUTION: A transparent ion detecting sensor chip(200) using field-effect transistor type signal converters in which an extended gate electrode(110) comprises a transparent substrate(100), an ion detecting sensor, and a passivation thin film(190). The ion detecting sensor comprises a detection thin film(120) and a selective ion penetrating film(130), and a well(140). The detecting film is formed on the transparent substrate and composed of an indum tin oxcide or graphene. The selective ion penetrating film is arranged in the upper part of the detecting thin film. The well covers the selective ion penetrating film and accommodates electrolyte. The gate electrode is electrically connected to the detecting thin film. The passivation thin film is formed on a field-effect transistor type signal converter.;COPYRIGHT KIPO 2012