METHODS OF FORMING SEMICONDUCTOR FILMS INCLUDING I₂-II-IV-VI₄ AND I₂-(II,IV)-IV-VI₄ SEMICONDUCTOR FILMS AND ELECTRONIC DEVICES INCLUDING THE SEMICONDUCTOR FILMS

摘要

Embodiments of the present invention generally include methods for forming semiconductor films having nominal I₂-II-IV-VI₄ stoichiometry, such as CZTS or CZTSSe, using a solution of including sources of the I, II, IV, and VI elements in a liquid solvent. Precursors may be mixed in the solvent to form the solution. Metal halide salts may be used as precursors in some examples. The solution may be coated onto a substrate and annealed to yield the semiconductor film. In some examples, the source of the 'I' and 'IV' elements may contain the elements in a +2 oxidation state, while the semiconductor film may contain the 'I' element in a +1 oxidation state and the 'IV' element in a +4 oxidation state. Examples may be used to provide I₂-(II,IV)-IV-VI₄ films.