MODULATION-DOPED HALO IN QUANTUM WELL FIELD-EFFECT TRANSISTORS, APPARATUS MADE THEREWITH, AND METHODS OF USING SAME

摘要

The quantum well (QW) layer is provided in a semiconductor device. The QW layer is provided with a beryllium -doped barrier layer in Halo structures under QW layer. The semiconductor device includes a lower layer and an upper barrier layer over each of InGaAs and the bottom of the QW layer . The semiconductor device also includes a high -k gate dielectric layer that is formed on the InP spacer first layer in the gate recess . Process for forming a QW layer include the use of off -cut semiconductor substrate .