PHASE CHANGE MEMORY APPARATUS WHICH INCLUDES A THREE-DIMENSIONAL STACK STRUCTURE CAPABLE OF IMPROVING INTEGRATION DENSITY

摘要

PURPOSE: A phase change memory apparatus which includes a three-dimensional stack structure is provided to extend a phase change pattern and switching diode comprising a phase change memory cell as a line shape parallel to a substrate, thereby integrating a plurality of phase change memory cells in a limited area.;CONSTITUTION: A phase change material film is evaporated with a predetermined thickness on the upper part of a semiconductor substrate(100). A plurality of line structures extended to both directions is arranged based on a first and second word lines(121,131). The line structure includes a plurality of Schottky diodes(D1,D2) respectively laminated in upper and lower sides. A phase change pattern(165) is arranged in the internal space of a horizontal hole surrounded by a heating electrode(150). A conductive layer for an upper electrode is arranged along the surface of a resulting semiconductor substrate product.;COPYRIGHT KIPO 2012