PHASE CHANGE MEMORY DEVICE WITH A THREE DIMENSIONAL STACK STRUCTURE AND MANUFACTURING METHOD THEREOF CAPABLE OF IMPROVING INTEGRATION DENSITY WITHOUT THE INFLUENCE OF AN EXPOSURE SOURCE

摘要

PURPOSE: A phase change memory device with a three dimensional stack structure and a manufacturing method thereof are provided to integrate a plurality of phase change memory cells in a limited area by laminating a plurality of phase change memory cells of a line type. ;CONSTITUTION: A word line structure is extended on a semiconductor substrate in one direction. A phase change structure is extended from the sidewall of the word line structure in parallel. The phase change structure includes a phase change memory cell which is comprised of a switching device, a heating electrode(150), and a phase change pattern(165). One side of the switching device is contacted with a word line. The heating electrode is formed on one side of the switching device. The phase change pattern is contacted with the heating electrode. A top electrode(171) is formed on one side of a phase change structure.;COPYRIGHT KIPO 2011