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METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE, CAPABLE OF USING A RESISTANCE FILM INCLUDING A PLURALITY OF OXYGEN VACANCIES
METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE, CAPABLE OF USING A RESISTANCE FILM INCLUDING A PLURALITY OF OXYGEN VACANCIES
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机译:一种制造半导体设备的方法,该方法可使用包含多个氧气空位的电阻膜
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摘要
PURPOSE: A method for fabricating a semiconductor device is provided to reduce a process time and improve productivity by forming a resistance film having a variable resistance property.;CONSTITUTION: In a method for fabricating a semiconductor device, a metal layer is formed on a bottom electrode(21). An oxygen is ion-implanted in the metal layer(101). A thermal process is performed to change a metal layer(22A) into a resistor film. The resistor film comprises a plurality of oxygen vacancies A top electrode is formed on the resistor film.;COPYRIGHT KIPO 2012
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