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BUMPED, SELF-ISOLATED GAN TRANSISTOR CHIP WITH ELECTRICALLY ISOLATED BACK SURFACE
BUMPED, SELF-ISOLATED GAN TRANSISTOR CHIP WITH ELECTRICALLY ISOLATED BACK SURFACE
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机译:凸起的,自隔离的GAN晶体管芯片,带电气隔离的后表面
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摘要
A semiconductor device comprising a silicon substrate, a compound semiconductor material, an insulating material between the silicon substrate and the compound semiconductor material, and a top surface comprising means of electrical connection, and passivation material, where the passivation material is silicon nitride, silicon dioxide, or a combination of both. The present invention eliminates the need for a thick electrical insulator between a heat sink and the back surface of a surface mounted device by the inclusion of an AlN seed layer to electrically isolate the silicon substrate of the device. The sidewalls of the device are also electrically isolated from the active area of the device.
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