MAGNETIC RANDOM ACCESS MEMORY CIRCUIT CAPABLE OF MAXIMIZING YIELD OF AN MRAM BY PROGRAMMING, TESTING, AND CLASSIFYING MAGNETIC MEMORY DIES OR CHIPS

摘要

PURPOSE: A magnetic random access memory circuit is provided to program all cells by controlling programming currents with regard to each byte and prevent a memory cell from disturbing other cells.;CONSTITUTION: An initial nominal row programming current, an IR, an initial nominal column programming current, an IC are set(710). All magnetic memory array cells are recorded(720). All magnetic memory array cells are read again and are compared with the recorded cell values(730). If all comparisons between the read memory cell data and the recorded memory cell data pass, the IR and the IC are locked or fixed(740). A die with high quality is signaled(750). If the comparison between the read memory cell data and the recorded memory cell data fails(760), column or row programming currents are changed until all effective IC+IR combinations are tried(770). A defective die is signaled(780).;COPYRIGHT KIPO 2012