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TRANSISTOR HAVING HIGH MOBILITY AND A MANUFACTURING METHOD THEREOF, AND AN ELECTRIC COMPONENT INCLUDING THE TRANSISTOR

机译:具有高移动性的晶体管及其制造方法,以及包括该晶体管的电子元件

摘要

PURPOSE: A transistor and a manufacturing method thereof, and an electric component including the transistor are provided to suppress characteristic change due to light by using a plurality of oxide layers having different electrical characteristics as a channel layer.;CONSTITUTION: A channel layer(C1) is formed by using an oxide. Source and drain are respectively touched to both ends of the channel layer. A gate(G1) is corresponded to the channel layer. A gate insulating layer(GI1) is included between the channel layer and the gate. The channel layer comprises a first later and a second layer which is successively arranged from the gate insulating layer. The first layer is a conductor and the second layer is a transistor having conductivity which is lower than the first layer.;COPYRIGHT KIPO 2012
机译:目的:提供一种晶体管及其制造方法,以及包括该晶体管的电子部件,以通过使用具有不同电特性的多个氧化物层作为沟道层来抑制由于光引起的特性变化。组成:沟道层(C1) )是通过使用氧化物形成的。源极和漏极分别接触到沟道层的两端。栅极(G1)对应于沟道层。在沟道层和栅极之间包括栅极绝缘层(GI1)。沟道层包括第一层和第二层,第一层和第二层从栅极绝缘层连续地布置。第一层是导体,第二层是电导率低于第一层的晶体管。; COPYRIGHT KIPO 2012

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