首页> 外国专利> THIN FILM TRANSISTOR CAPABLE OF INCREASING ELECTRON MOBILITY, A THIN FILM TRANSISTOR ARRAY PANEL, AND A DISPLAY DEVICE INCLUDING THE SAME, AND A METHOD FOR MANUFACTURING THE THIN FILM TRANSISTOR

THIN FILM TRANSISTOR CAPABLE OF INCREASING ELECTRON MOBILITY, A THIN FILM TRANSISTOR ARRAY PANEL, AND A DISPLAY DEVICE INCLUDING THE SAME, AND A METHOD FOR MANUFACTURING THE THIN FILM TRANSISTOR

机译:能够增加电子移动性的薄膜晶体管,薄膜晶体管阵列,包括该薄膜晶体管的显示装置以及制造该薄膜晶体管的方法

摘要

PURPOSE: A thin film transistor, a thin film transistor array panel, and a display device including the same, and a method for manufacturing the thin film transistor are provided to improve electrical characteristics by forming an oxide semiconductor.;CONSTITUTION: A gate insulating layer (140) is positioned on or beneath a gate electrode. A first semiconductor is in contact with a second semiconductor. A source electrode (173) is connected to the second semiconductor. A drain electrode (175) faces the source electrode. The drain electrode is connected to the second semiconductor.;COPYRIGHT KIPO 2013
机译:目的:提供一种薄膜晶体管,薄膜晶体管阵列面板和包括该薄膜晶体管的显示装置,以及用于制造该薄膜晶体管的方法,以通过形成氧化物半导体来改善电特性。 (140)位于栅电极之上或之下。第一半导体与第二半导体接触。源电极(173)连接到第二半导体。漏电极(175)面对源电极。漏极连接到第二半导体。; COPYRIGHT KIPO 2013

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