METHOD FOR IMPROVING AN ELECTRICAL PROPERTY OF SEMICONDUCTOR DEVICE HAVING HETEROSTRUCTURE

摘要

PURPOSE: a kind of back substrate of the different offer structured illumination protons for the semiconductor device enhancing electrical feature improves the performance of semiconductor devices. ;CONSTITUTION: the different structure of semiconductor devices includes liquid crystal layer growth substrates. Rear side of the proton irradiation to substrate. Liquid crystal layer is GaAs, GaP, GaN being selected from made of group ZnO. It selects made of substrate by group, Si, SiC, GaAs, Sapphire Substrate. ;The 2012 of copyright KIPO submissions