GALLIUM NITRIDE WAFER MANUFACTURING METHOD IN WHICH GRAPHENE IS TRANSFERRED BETWEEN A SUBSTRATE AND A GALLIUM NITRIDE FILM

摘要

PURPOSE: A gallium nitride wafer manufacturing method is provided to reduce defect density of a gallium nitride film by increasing the thickness of the gallium nitride film by growing gallium nitride on a pre-transferred graphene sheet on a substrate.;CONSTITUTION: A substrate is prepared(S10). A sacrificial film for a separation process is deposited on the substrate(S20). Gallium nitride is formed on the sacrificial film which is comprised of graphene(S30). A gallium nitride film is separated from the substrate using the sacrificial film(S40). The gallium nitride film is manufactured without crack generation(S50).;COPYRIGHT KIPO 2012