首页> 外国专利> PITCH DIVISION PATTERNING TECHNIQUES FOR EXPANDING THE FUNCTION OF A LITHOGRAPHY TECHNIQUE EXCEEDING A MINIMUM PITCH

PITCH DIVISION PATTERNING TECHNIQUES FOR EXPANDING THE FUNCTION OF A LITHOGRAPHY TECHNIQUE EXCEEDING A MINIMUM PITCH

机译:扩展除最小间距之外的光刻技术功能的间距划分图案技术

摘要

PURPOSE: Pitch division patterning techniques are provided to increase the physical stability of a pitch divided line by using a process operation of increasing structural rigidity having a high aspect ratio.;CONSTITUTION: A photo resister includes a line having a wide pad. An end part of a spacer is cut through a wet etching process and the line is formed. Landing contact pads(190-197) are arranged in the end part of the spacer. A final hard mask pattern(155) is transferred on a substrate layer(160). The substrate layer includes a single material layer, a plurality of different material layers, and a layer having a domain with different materials or structures.;COPYRIGHT KIPO 2012
机译:目的:提供节距图案化技术以通过使用具有高纵横比的增加结构刚度的工艺操作来增加节距分割线的物理稳定性。组成:光阻器包括具有宽焊盘的线。隔片的端部通过湿蚀刻工艺被切割并且形成线。在垫片的端部布置有接触焊盘(190-197)。最终的硬掩模图案(155)被转印在衬底层(160)上。衬底层包括单个材料层,多个不同的材料层以及具有具有不同材料或结构的畴的层。; COPYRIGHT KIPO 2012

著录项

  • 公开/公告号KR20120034092A

    专利类型

  • 公开/公告日2012-04-09

    原文格式PDF

  • 申请/专利权人 INTEL CORPORATION;

    申请/专利号KR20120025639

  • 发明设计人 TANG SANH D.;LIU HAITAO;SILLS SCOTT;

    申请日2012-03-13

  • 分类号H01L21/027;

  • 国家 KR

  • 入库时间 2022-08-21 17:10:20

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号