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SUPPORT RING FOR SUPPORTING A SEMICONDUCTOR WAFER COMPOSED OF MONOCRYSTALLINE SILICON CAPABLE OF PREVENTING SAGGING DURING THERMAL TREATMENT, A THERMAL TREATMENT METHOD OF THE SEMICONDUCTOR WAFER, AND A THERMALLY TREATED SEMICONDUCTOR WAFER COMPOSED OF THE MONOCRYSTALLINE SILICON
SUPPORT RING FOR SUPPORTING A SEMICONDUCTOR WAFER COMPOSED OF MONOCRYSTALLINE SILICON CAPABLE OF PREVENTING SAGGING DURING THERMAL TREATMENT, A THERMAL TREATMENT METHOD OF THE SEMICONDUCTOR WAFER, AND A THERMALLY TREATED SEMICONDUCTOR WAFER COMPOSED OF THE MONOCRYSTALLINE SILICON
PURPOSE: A support ring for supporting a semiconductor wafer composed of monocrystalline silicon, a thermal treatment method of the semiconductor wafer, and a thermally treated semiconductor wafer composed of the monocrystalline silicon are provided to improve nanotopography by reducing stress during thermal treatment.;CONSTITUTION: A curved surface(4) is extended from an outer side(2) to an inner side(3). The curved surface arranges a semiconductor wafer. The curvature radius of the curved surface is 6000mm to 9000mm for arranging a semiconductor wafer having the diameter of 300mm. The curvature radius of the curved surface is 9000mm to 14000mm for arranging the semiconductor wafer having the diameter of 450mm.;COPYRIGHT KIPO 2012
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