首页> 外国专利> SUPPORT RING FOR SUPPORTING A SEMICONDUCTOR WAFER COMPOSED OF MONOCRYSTALLINE SILICON CAPABLE OF PREVENTING SAGGING DURING THERMAL TREATMENT, A THERMAL TREATMENT METHOD OF THE SEMICONDUCTOR WAFER, AND A THERMALLY TREATED SEMICONDUCTOR WAFER COMPOSED OF THE MONOCRYSTALLINE SILICON

SUPPORT RING FOR SUPPORTING A SEMICONDUCTOR WAFER COMPOSED OF MONOCRYSTALLINE SILICON CAPABLE OF PREVENTING SAGGING DURING THERMAL TREATMENT, A THERMAL TREATMENT METHOD OF THE SEMICONDUCTOR WAFER, AND A THERMALLY TREATED SEMICONDUCTOR WAFER COMPOSED OF THE MONOCRYSTALLINE SILICON

机译:用于支持由能防止热处理过程中凹陷的单晶硅构成的半导体晶片的支撑环,一种用于半导体晶片的热处理方法以及一种由硅组成的热处理半导体晶片的支撑环

摘要

PURPOSE: A support ring for supporting a semiconductor wafer composed of monocrystalline silicon, a thermal treatment method of the semiconductor wafer, and a thermally treated semiconductor wafer composed of the monocrystalline silicon are provided to improve nanotopography by reducing stress during thermal treatment.;CONSTITUTION: A curved surface(4) is extended from an outer side(2) to an inner side(3). The curved surface arranges a semiconductor wafer. The curvature radius of the curved surface is 6000mm to 9000mm for arranging a semiconductor wafer having the diameter of 300mm. The curvature radius of the curved surface is 9000mm to 14000mm for arranging the semiconductor wafer having the diameter of 450mm.;COPYRIGHT KIPO 2012
机译:目的:提供用于支撑由单晶硅构成的半导体晶片的支撑环,该半导体晶片的热处理方法以及由该单晶硅构成的热处理的半导体晶片,以通过降低热处理期间的应力来改善纳米形貌。弯曲表面(4)从外侧(2)延伸到内侧(3)。弯曲表面布置半导体晶片。弯曲表面的曲率半径为6000mm至9000mm,用于布置直径为300mm的半导体晶片。曲面的曲率半径为9000mm至14000mm,用于布置直径为450mm的半导体晶片。; COPYRIGHT KIPO 2012

著录项

  • 公开/公告号KR20120041146A

    专利类型

  • 公开/公告日2012-04-30

    原文格式PDF

  • 申请/专利权人 SILTRONIC AG;

    申请/专利号KR20110107622

  • 申请日2011-10-20

  • 分类号H01L21/683;H01L21/324;

  • 国家 KR

  • 入库时间 2022-08-21 17:10:12

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