SUPPORT RING FOR SUPPORTING A SEMICONDUCTOR WAFER COMPOSED OF MONOCRYSTALLINE SILICON DURING A THERMAL TREATMENT, METHOD FOR THE THERMAL TREATMENT OF SUCH A SEMICONDUCTOR WAFER, AND THERMALLY TREATED SEMICONDUCTOR WAFER COMPOSED OF MONOCRYSTALLINE SILICON

摘要

According to the present invention , a semiconductor wafer made of single-crystal silicon during the heat treatment of a semiconductor wafer a support ring for supporting , and the outer side and an inner side , extending from the outer side to the inner side and comprises a curved surface which serves for the arrangement of the semiconductor wafer , and wherein the curved surface is the arrangement of the semiconductor wafer with a diameter of 300 mm If configured for more than 6000 mm , the radius of curvature is equal to or less than 9000 mm , or the curved surface has a diameter of 450 mm for a semiconductor wafer of a batch consisting of a case, the curvature radius is more than 14000 mm 9000 mm or less is provided in the support ring is . In addition , the heat-treated semiconductor wafer made of a heat treatment method and the single crystal silicon wafer is provided in such a . ;