METHOD OF MANUFACTURING VERTICAL LIGHT EMITTING DIODE USING LIGHT EMITTING DIODE EPILAYER GROWTHED ON PATTERNED SAPPAIRE SUBSTRATE AND VERTICAL LIGHT EMITTING DIODE MANUFACTURED BY THE METHOD

摘要

PURPOSE: A manufacturing method of a vertical LED using a LED epilayer grown on a patterned sappaire substrate and a vertical LED manufactured thereby are provided to improve optical extraction efficiency without an additional patterning process by transferring a pattern formed on a sapphire substrate after laser lift-off on a surface of an n-type nitride gallium semiconductor. CONSTITUTION: A gallium nitride semiconductor layer is grown up on a sapphire substrate on which a pattern is formed(S10). Surface roughness on a rear side of the sapphire substrate is controlled(S20). A vertical type LED structure is formed on a surface of the p-type gallium nitride semiconductor layer(S30). The sapphire substrate is separated by using a laser(S40). A surface of the gallium nitride semiconductor layer is processed(S50). An electrode is formed(S60).