VERTICAL LIGHT EMITTING DIODE CAPABLE OF VERTICALLY ARRANGING AN ELECTRODE WITHOUT ELIMINATING A SUBSTRATE WHERE A NITRIDE SEMICONDUCTOR LAYER IS GROWN AND A MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A vertical light emitting diode and a manufacturing method thereof are provided to arrange first and second electrodes on the upper/lower parts of a nitride semiconductor layer respectively, thereby preventing the reduction of the size of a light emitting area. ;CONSTITUTION: A substrate(110) includes a plurality of via holes(111) which is vertically penetrated. A plurality of nitride semiconductor layers is formed on the substrate. A first electrode(170) is formed on the nitride semiconductor layers by a transparent conductive material. A second electrode(180) contacts the lower part of the nitride semiconductor layers.;COPYRIGHT KIPO 2011