SOLUTION FOR REDUCING A SOFT ERROR RATE OF A THERMAL NEUTRON IN AN IC MANUFACTURING PROCESS

摘要

PURPOSE: A solution for reducing a soft error rate of a thermal neutron in an IC manufacturing process to is provided to reduce the soft error rate of the thermal neutron by removing BPSG(Boron Phosphorus Silicate Glass).;CONSTITUTION: A polysiliicon gate structure(140a,140b) forms gates of a PMOS transistor and an NMOS transistor. An interlayer dielectric layer(141 ILD) is formed on the upper side of the gate. A first metal layer(150 M1) is formed on the upper side of the interlayer dielectric layer. A second metal layer(160 M2) is formed on the upper side of an intermetal dielectric layer. A third metal layer(170 M3) is formed on the upper side of the second metal layer.;COPYRIGHT KIPO 2012