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Thermal neutron induced soft error rate measurement in semiconductor memories and circuits

机译:半导体存储器和电路中的热中子感应软错误率测量

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摘要

Soft error rate (SER) testing and measurements of semiconductor circuits with different operating voltages and operating conditions have been performed using the thermal neutron beam at the Radiation Science and Engineering Center (RSEC) at Penn State University. The high neutron flux allows for accelerated testing for SER by increasing reaction rate densities inside the tested device that gives more precision in the experimental data with lower experimental run time. The effect of different operating voltages and operating conditions on INTEL PXA270 processor has been experimentally determined. Experimental results showed that the main failure mechanism was the segmentation faults in the system. Failure response of the system to the operating conditions was in agreement with the general behavior of SERs.
机译:在宾夕法尼亚州立大学辐射科学与工程中心(RSEC)使用热中子束,已经对具有不同工作电压和工作条件的半导体电路进行了软错误率(SER)测试和测量。高中子通量可通过增加被测设备内部的反应速率密度来加快SER的测试速度,从而在更短的实验运行时间下提供更高的实验数据精度。已经通过实验确定了不同工作电压和工作条件对INTEL PXA270处理器的影响。实验结果表明,故障的主要机理是系统中的分段故障。系统对操作条件的故障响应与SER的一般行为一致。

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