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CMP Slurry composition for copper damascene process

机译:用于铜镶嵌工艺的CMP浆料组合物

摘要

present invention is colloidal silica containing a chemical mechanical polishing slurry to be said about colloidal silica oxidizing the silicon (Si) powder in an aqueous solution under a basic catalyst is characterized in that the manufacture by direct oxidation to form the silica. ; colloidal silica contained in the slurry for chemical mechanical polishing according to the present invention is prepared by direct oxidation method , and the advantages , as well as a small impurity content less expensive production cost , for use in chemical mechanical polishing particles have the advantage of being a more suitable surface shape and dispersion stability and is suitable for use in the chemical mechanical polishing of a substrate comprising copper .
机译:本发明是一种含有化学机械抛光浆料的胶体二氧化硅,据说该胶体二氧化硅是在碱性催化剂的作用下将水溶液中的硅(Si)粉末氧化的特征,其特征在于通过直接氧化形成二氧化硅。 ;根据本发明的化学机械抛光用浆料中所含的胶体二氧化硅是通过直接氧化法制备的,其优点是,杂质含量少,生产成本低廉,用于化学机械抛光颗粒具有以下优点:更适合的表面形状和分散稳定性,适用于化学机械抛光包含铜的基材。

著录项

  • 公开/公告号KR101107520B1

    专利类型

  • 公开/公告日2012-01-31

    原文格式PDF

  • 申请/专利权人

    申请/专利号KR20090036978

  • 发明设计人 정은일;한덕수;김석주;박휴범;

    申请日2009-04-28

  • 分类号C09K3/14;

  • 国家 KR

  • 入库时间 2022-08-21 17:08:42

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