NOVEL DOUBLE HBT-BASED CAPACITORLESS 1T DRAM CELL WITH SI/SIGE HETERO JUNCTIONS THROUGH THE SOURCE AND DRAIN OF A SILICON MATERIAL

摘要

PURPOSE: A novel double HBT-based capacitorless 1t dram cell with Si/SiGE hetero junctions is provided to improve carrier production rate by forming a hetero structure which is divided into the upper part and lower part of a body.;CONSTITUTION: A body(110) of a vertical pin type is formed on a substrate(100). The body is formed by using silicon-germanium. The source(120) and drain(130) of a silicon material are formed in right and left sides of the longitudinal direction of the body. A top gate(140) and a bottom gate(150) of a double structure are formed in the top and bottom of the body. A spacer(170) isolates the top gate, the bottom gate, the source and the drain.;COPYRIGHT KIPO 2012