METHOD OF FORMING ZTO THIN FILM PATTERN, A THIN FILM TRANSISTOR AND A MANUFACTURING METHOD THEREBY, CAPABLE OF SUPPRESSING A LEAKAGE CURRENT AND IMPROVING ELECTORAL PROPERTY

摘要

PURPOSE: A method of forming ZTO thin film pattern, a thin film transistor and a manufacturing method thereby are provided to reduce manufacturing costs and a manufacturing time by improving productivity by etching a ZTO(Zinc Tin Oxide) film in rapid.;CONSTITUTION: In a method of forming ZTO thin film pattern, a thin film transistor and a manufacturing method thereby, a ZTO solution is spun-coated to form a ZTO thin film. The ZTO thin film is heat-treated in first. The treated ZTO thin film is patterned. The patterned ZTO thin film is heat-treated in second.;COPYRIGHT KIPO 2012