STRAINED SILICON MOS DEVICE WITH BOX LAYER BETWEEN THE SOURCE AND DRAIN REGIONS

摘要

MOS device, a gate stack, the gate stack including a gate electrode disposed on the gate dielectric and a first spacer and a second spacer formed on the side opposite to the side, and the source region close to the first spacer, and a drain region adjacent to the second spacer, located below the gate stack, the source region and the consists of a channel region disposed between the drain region. MOS devices of the present invention is located below the channel region, a source region and a drain region disposed between the buried oxide (BOX) region further comprises: BOX region is able to form a deeper source region and the drain region in order to reduce the gate edge junction parasitic transistor as well as the capacity of inhibition along with resistance and salicide spike defect.